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SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices – 222nd ECS Meeting/PRiME 2012

SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices – 222nd ECS Meeting/PRiME 2012

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Quick Overview:
This issue of ECS Transactions will review and discuss materials and device related aspects of SiGe, Ge, and Related Compounds (eg SiC). There were 9 areas of interest in the symposium: 1. Heterojunction Bipolar Transistors; 2. FET Technology; 3. Optoelectronics ; 4. Epitaxy; 5. Processing; 6.Strain Engineering; 7. Surfaces and Interfaces; 8. Germanium and Related Compounds; and 9. Emerging Applications.
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$213.13 - SiGe, Ge, and Related Compounds

$170.50 - SiGe, Ge, and Related Compounds

ISBN:978-1-60768-357-5
Number of pages:1363
Year published:2012
Authors/Editors:Harame, Caymax, Krishnamohan, Masini, Miyazaki, Niu, Reznicek, Saraswat, Tillack, Vincent, Yeo, Uchida
Event Title:222nd ECS Meeting: 2012 Fall Meeting of ECSJ: PRiME 2012: Honolulu, HI
Format:PDF
Product Code:T201205009
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