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SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices – 214th ECS Meeting/PRiME 2008

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices – 214th ECS Meeting/PRiME 2008

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Quick Overview:
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
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$144.00 - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

$115.20 - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

ISBN:978-1-60768-009-3
Number of pages:1102
Year published:2008
Authors/Editors:Harame, Boquet, Caymax, Cressler, Koester, Masini, Miyazaki, Reznicek, Rim, Takagi, and Tillack
Event Title:214th ECS Meeting : 2008 Fall Meeting of ECSJ : PRiME 2008 : Honolulu, Hawaii
Format:PDF
Product Code:T200801610
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