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Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5 – 227th ECS Meeting

Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5 – 227th ECS Meeting

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This issue of ECST describe emerging materials, process and technology options for large-area silicon wafers to enhance advanced IC performance or to enable revolutionary device structures with entirely new functionalities. Topics in this issue will include high-mobility channel materials, (e.g. strained Si/Ge, compound semiconductors and graphene), high-performance gate stacks and low-resistivity junctions and contacts on new, Si-compatible materials; new materials and processes for 3-D (TSV) integration ; synthesis of nano-structures including wires, pores and membranes of Si-compatible materials; novel MEMS/NEMS structures and their integration with the mainstream Si-IC technology.
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$129.00 - Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5

$103.00 - Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5

ISBN:978-1-62332-237-3
Number of pages:403
Year published:2015
Authors/Editors:F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev
Event Title:227th ECS Meeting: Chicago, Illinois
Format:CD
Product Code:T201506604CD
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