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Description
The papers included in this issue of ECS Transactions were originally presented in the symposium “Gallium Nitride and Silicon Carbide Power Technologies 6”, held during the PRiME 2016 joint international meeting of The Electrochemical Society, The Electrochemical Society of Japan, and the Korean Electrochemical Society, with the technical co-sponsorship of the Chinese Society of Electrochemistry, the Electrochemistry Division of the Royal Australian Chemical Institute, the Japan Society of Applied Physics, the Chinese Physical Society Semiconductor Division, and the Semiconductor Physics Division of the Chinese Physics Society. This meeting was held in Honolulu, Hawaii, from October 2-7, 2016.
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