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Semiconductors, Dielectrics, and Metals for Nanoelectronics 11 – 224th ECS Meeting

Semiconductors, Dielectrics, and Metals for Nanoelectronics 11 – 224th ECS Meeting

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Quick Overview:
The issue of ECS Transactions covers topics like Germanium Channels; GaAs, InGaAs, InP, GaSb, InSb, GaN, and SiC Channels; Semiconductor Nano-Wire Technology; Carbon Nano-Tube, Graphene and Related 2D Materials; Novel Transistor Structures; Gate Electrode Metals and Work Function Tuning; Defects, Traps, and Reliability; Novel Dielectric Materials and Oxide interfaces; Volatile and Non-Volatile Memory; and Challenges for Process Development.
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$133.37 - Semiconductors, Dielectrics, and Metals for Nanoelectronics 11

$106.70 - Semiconductors, Dielectrics, and Metals for Nanoelectronics 11

ISBN:978-1-60768-452-7
Number of pages:394
Year published:2013
Authors/Editors:Kar, Houssa, Van Elshocht, Misra, Kita, Landheer, Jagannathan
Event Title:224th ECS Meeting: San Francisco, California
Format:PDF
Product Code:T201305807
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