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This issue of ECS Transactions covers the most current state-of-the-art in GaN and SiC power technologies pertaining to materials, devices and circuits. There are about 60 papers in this issue that will be presented by the authors at Symposium E4 to be held at the Fall 2012 ECS Meeting in Honolulu, Hawaii. The authors come from several countries in the world – most papers are from US, Japan, China and European countries. Many of these papers are invited by the Symposium organizers. The Symposium will begin with a Plenary Session and will consist of three panel discussion sessions in addition to invited and contributed papers. Details of these panel sessions will also be listed in this issue. All matters related to the current and future symposia are overseen by an International Advisory Committee (IAB) consisting of eminent scholars and researchers in the field from various countries – the IAB will also be listed in the issue.