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Wide Bandgap Semiconductor Materials and Devices 12 – 219th ECS Meeting

Wide Bandgap Semiconductor Materials and Devices 12 – 219th ECS Meeting

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Quick Overview:
This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.


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$83.69 - Wide Bandgap Semiconductor Materials and Devices 12

ISBN:978-1-60768-217-2
Number of pages:360
Year published:2011
Authors/Editors:Bardwell, Caldwell, Hunter, Mi, Stokes, Wetzel
Event Title:219th ECS Meeting: and SOFC-XII: Montreal, QC, Canada
Format:PDF
Product Code:T201103506
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