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High Purity Silicon 12 – 222nd ECS Meeting/PRiME 2012

High Purity Silicon 12 – 222nd ECS Meeting/PRiME 2012

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Quick Overview:
These Proceedings of the 12th High Purity Silicon symposium provides an overview of the latest developments in growth, characterization, device processing and applications of high purity silicon and related Group IV semiconductors (Ge, SiGe,...) in either bulk or epitaxial form. The emphasis is on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states in high purity and high resistivity silicon for superior device performance and processing yield. Device and circuit aspects related to the application of the devices fabricated on high resistivity silicon wafers will also be addressed. Special attention will be given to alternative and high-mobility substrates and their material and devices aspects in comparison with silicon.

$99.59 - High Purity Silicon 12

$79.67 - High Purity Silicon 12

Number of pages:360
Year published:2012
Authors/Editors:Simoen, Claeys, Stallhofer, Falster, and Mazure
Event Title:222nd ECS Meeting: 2012 Fall Meeting of ECSJ: PRiME 2012: Honolulu, HI
Product Code:T201205005
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