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Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment – 211th ECS Meeting

Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment – 211th ECS Meeting

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$103.00 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment – 211th ECS Meeting

$82.40 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3: New Materials, Processes and Equipment – 211th ECS Meeting

ISBN:978-1-56677-550-2
Number of pages:482
Year published:2007
Authors/Editors:M. Öztürk, D.-L. Kwong, P. J. Timans, E. P. Gusev, F. Roozeboom, S. J. Koester, H. Iwai
Event Title:211th ECS Meeting: Chicago, Illinois
Format:PDF
Product Code:T200700601
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