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(Print on Demand) Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment – 210th ECS Meeting

(Print on Demand) Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment – 210th ECS Meeting

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$101.00 - (Print on Demand) Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment – 210th ECS Meeting

$80.80 - (Print on Demand) Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment – 210th ECS Meeting

ISBN:978-1-51086-650-8
Number of pages:460
Year published:2006
Authors/Editors:Roozeboom, F. et al.
Event Title:210th ECS Meeting: Cancun, Mexico
Format:Print-on-Demand/Softcover
Product Code:T200600302POD
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