Skip to main content
My Account

Online Store

My Payment Info | My Invoices | My Wishlist | My Discounts

My Cart


Go Back
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment – 213th ECS Meeting

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment – 213th ECS Meeting

Available
Rating: 0 out of 5
  • 1
  • 2
  • 3
  • 4
  • 5
No Reviews
Quick Overview:
Price:

$104.00 - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment

$83.20 - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment

Number of pages:474
Year published:2008
Authors/Editors:P. J. Timans, E. P. Gusev, H. Iwai, D. L. Kwong, M. C. Öztürk, F. Roozeboom
Event Title:213th ECS Meeting: Phoenix, Arizona
Format:PDF
Product Code:T200801301
Share it:
Add to Cart
104.00
Required
We're sorry, but there is no inventory for the product you selected. Check out these other great products:

Related Products

    Other Purchased Products

      Reviews

      No records found.

        ©  The Electrochemical Society, All Rights Reserved.
        65 South Main Street, Building D, Pennington, New Jersey 08534-2839, USA