Skip to main content
My Account

Online Store

My Payment Info | My Invoices | My Wishlist | My Discounts

My Cart


Go Back
(Print on Demand) Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment – 217th ECS Meeting

(Print on Demand) Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment – 217th ECS Meeting

Available
Rating: 0 out of 5
  • 1
  • 2
  • 3
  • 4
  • 5
No Reviews
Quick Overview:
Price:

$143.00 - (Print on Demand) Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment – 217th ECS Meeting

$114.40 - (Print on Demand) Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment – 217th ECS Meeting

ISBN:978-1-51086-671-3
Number of pages:412
Year published:2010
Authors/Editors:E.P. Gusev, H. Iwai, D-L. Kwong, M.C. Ozturk, F. Roozeboom, P. J. Timans, V. Narayanan
Event Title:217th ECS Meeting: Corporate Tutorial: Intellectual Property
Format:Print-on-Demand/Softcover
Product Code:T201002801POD
Share it:
Add to Cart
143.00
Required
We're sorry, but there is no inventory for the product you selected. Check out these other great products:

Related Products

    Other Purchased Products

      Reviews

      No records found.

        ©  The Electrochemical Society, All Rights Reserved.
        65 South Main Street, Building D, Pennington, New Jersey 08534-2839, USA