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Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment – 217th ECS Meeting

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment – 217th ECS Meeting

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$130.08 - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment

$104.06 - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment

ISBN:978-1-60768-141-0
Number of pages:412
Year published:2010
Authors/Editors:E.P. Gusev, H. Iwai, D-L. Kwong, M.C. Ozturk, F. Roozeboom, P. J. Timans, V. Narayanan
Event Title:217th ECS Meeting: Vancouver, BC, Canada
Format:PDF
Product Code:T201002801
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