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Physics and Technology of High-k Gate Dielectrics 6 – 214th ECS Meeting/PRiME 2008

Physics and Technology of High-k Gate Dielectrics 6 – 214th ECS Meeting/PRiME 2008

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The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.


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$104.00 - Physics and Technology of High-k Gate Dielectrics 6

$83.20 - Physics and Technology of High-k Gate Dielectrics 6

ISBN:978-1-60768-004-8
Number of pages:530
Year published:2008
Authors/Editors:Kar, Landheer, Houssa, Misra, Van Elshocht, and Iwai
Event Title:214th ECS Meeting : 2008 Fall Meeting of ECSJ : PRiME 2008 : Honolulu, Hawaii
Format:PDF
Product Code:T200801605
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