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Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment – 210th ECS Meeting

Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment – 210th ECS Meeting

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$97.00 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment

$77.60 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment

ISBN:1-56677-502-7
Number of pages:470
Year published:2006
Authors/Editors:F. Roozeboom, M. C. Öztürk, D. -L. Kwong, P. J. Timans, H. Iwai, E. Gusev
Event Title:210th ECS Meeting: Cancun, Mexico
Format:PDF
Product Code:T200600302
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