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Processes at the Semiconductor-Solution Interface 4 – 219th ECS Meeting

Processes at the Semiconductor-Solution Interface 4 – 219th ECS Meeting

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Quick Overview:
The symposium consisted of four half-day sessions on topics at the forefront of semiconductor electrochemistry and solution-based processing including etching, patterning, passivation, porosity formation, electrochemical film growth, energy conversion materials, deposition, semiconductor surface functionalization, photoelectrochemical and optical properties, and other related processes. This issue of ECS Transactions contains 18 of the papers presented including invited papers by H. Föll (Christian-Albrechts University Kiel), J. N. Chazalviel (Ecole Polytechnique, CNRS), D. N. Buckley (University of Limerick, and Past President, ECS), J. D. Holmes (University College Cork), E. Chassaing (IRDEP, EDF-CNRS-ENSCP).

$63.61 - Processes at the Semiconductor-Solution Interface 4

Number of pages:224
Year published:2011
Authors/Editors:O’Dwyer and Etcheberry
Event Title:219th ECS Meeting: and SOFC-XII: Montreal, QC, Canada
Product Code:T201103508
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